Technische Details FQB19N20TM ON Semiconductor
Description: MOSFET N-CH 200V 19.4A D2PAK, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 3.13W (Ta), 140W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc).
Weitere Produktangebote FQB19N20TM nach Preis ab 0.67 EUR bis 5.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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FQB19N20TM | ON Semiconductor |
 Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 786 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB19N20TM | onsemi |
Description: MOSFET N-CH 200V 19.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB19N20TM | ON Semiconductor |
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 5600 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB19N20TM | onsemi |
MOSFETs 200V N-Ch QFET Logic Level |
auf Bestellung 11390 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB19N20TM | onsemi |
Description: MOSFET N-CH 200V 19.4A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1892 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQB19N20TM | FAIRCHILD |
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 254 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQB19N20TM | FCS |
02+ |
auf Bestellung 12774 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FQB19N20TM |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 786 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 108+ | 1.62 EUR |
| 191+ | 0.88 EUR |
| 194+ | 0.83 EUR |
| 197+ | 0.79 EUR |
| 200+ | 0.75 EUR |
| 250+ | 0.7 EUR |
| 500+ | 0.67 EUR |
| FQB19N20TM |
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Hersteller: onsemi
Description: MOSFET N-CH 200V 19.4A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Description: MOSFET N-CH 200V 19.4A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.87 EUR |
| FQB19N20TM |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 5600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 244+ | 2.68 EUR |
| 500+ | 2.36 EUR |
| 1000+ | 2.14 EUR |
| FQB19N20TM |
|
Hersteller: onsemi
MOSFETs 200V N-Ch QFET Logic Level
MOSFETs 200V N-Ch QFET Logic Level
auf Bestellung 11390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.71 EUR |
| 10+ | 3.72 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.01 EUR |
| 800+ | 1.87 EUR |
| FQB19N20TM |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 19.4A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 200V 19.4A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1892 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.84 EUR |
| 10+ | 3.78 EUR |
| 100+ | 2.62 EUR |
| FQB19N20TM |
|
Hersteller: FAIRCHILD
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 244+ | 2.68 EUR |
| FQB19N20TM |
|
Hersteller: FCS
02+
02+
auf Bestellung 12774 Stücke:
Lieferzeit 21-28 Tag (e)