FQB19N20TM ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 108+ | 1.65 EUR |
| 191+ | 0.9 EUR |
| 194+ | 0.86 EUR |
| 197+ | 0.81 EUR |
| 200+ | 0.76 EUR |
| 250+ | 0.73 EUR |
| 500+ | 0.68 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
108 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FQB19N20TM ON Semiconductor
Description: MOSFET N-CH 200V 19.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V, Power Dissipation (Max): 3.13W (Ta), 140W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V.
Weitere Produktangebote FQB19N20TM nach Preis ab 1.65 EUR bis 6.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
FQB19N20TM | ON Semiconductor |
 Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 786 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
FQB19N20TM | onsemi |
Description: MOSFET N-CH 200V 19.4A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
FQB19N20TM | ON Semiconductor |
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 5600 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
FQB19N20TM | onsemi |
MOSFETs 200V N-Ch QFET Logic Level |
auf Bestellung 9690 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
FQB19N20TM | onsemi |
Description: MOSFET N-CH 200V 19.4A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 1881 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| FQB19N20TM | FAIRCHILD |
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 254 Stücke: Lieferzeit 14-21 Tag (e) |
|
| FQB19N20TM |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 786 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 108+ | 1.65 EUR |
| FQB19N20TM |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 19.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 200V 19.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.89 EUR |
| FQB19N20TM |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 5600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 244+ | 2.74 EUR |
| 500+ | 2.42 EUR |
| 1000+ | 2.19 EUR |
| FQB19N20TM |
|
Hersteller: onsemi
MOSFETs 200V N-Ch QFET Logic Level
MOSFETs 200V N-Ch QFET Logic Level
auf Bestellung 9690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.95 EUR |
| 10+ | 2.98 EUR |
| 100+ | 2.68 EUR |
| 500+ | 2.15 EUR |
| 800+ | 1.98 EUR |
| FQB19N20TM |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 19.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 200V 19.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 1881 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.07 EUR |
| 10+ | 3.94 EUR |
| 50+ | 3.02 EUR |
| 100+ | 2.73 EUR |
| FQB19N20TM |
|
Hersteller: FAIRCHILD
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 254 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 244+ | 2.74 EUR |