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FQB22P10TM

FQB22P10TM onsemi

fqb22p10-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.7 EUR
1600+1.57 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FQB22P10TM onsemi

Description: MOSFET P-CH 100V 22A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V, Power Dissipation (Max): 3.75W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V.

Weitere Produktangebote FQB22P10TM nach Preis ab 1.58 EUR bis 5.38 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FQB22P10TM FQB22P10TM ONSEMI FQB22P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3381 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.56 EUR
31+2.81 EUR
35+2.46 EUR
41+2.07 EUR
50+1.82 EUR
100+1.62 EUR
500+1.58 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM FQB22P10TM Fairchild info-tfqb22p10tm.pdf Transistor P-Channel MOSFET; 100V; 30V; 125mOhm; 22A; 125W; -55°C ~ 175°C; FQB22P10TM TFQB22p10tm
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.82 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM FQB22P10TM onsemi / Fairchild FQB22P10-D.pdf MOSFETs 100V P-Channel QFET
auf Bestellung 21108 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.69 EUR
10+3.19 EUR
100+2.2 EUR
800+1.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM FQB22P10TM onsemi fqb22p10-d.pdf MOSFETs 100V P-Channel QFET
auf Bestellung 20283 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.28 EUR
10+3.27 EUR
100+2.34 EUR
500+1.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM FQB22P10TM onsemi fqb22p10-d.pdf Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 6316 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.38 EUR
10+3.47 EUR
100+2.39 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM FQB22P10.pdf
FQB22P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3381 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.56 EUR
31+2.81 EUR
35+2.46 EUR
41+2.07 EUR
50+1.82 EUR
100+1.62 EUR
500+1.58 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM info-tfqb22p10tm.pdf
FQB22P10TM
Hersteller: Fairchild
Transistor P-Channel MOSFET; 100V; 30V; 125mOhm; 22A; 125W; -55°C ~ 175°C; FQB22P10TM TFQB22p10tm
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
10+3.82 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM FQB22P10-D.pdf
FQB22P10TM
Hersteller: onsemi / Fairchild
MOSFETs 100V P-Channel QFET
auf Bestellung 21108 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.69 EUR
10+3.19 EUR
100+2.2 EUR
800+1.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM fqb22p10-d.pdf
FQB22P10TM
Hersteller: onsemi
MOSFETs 100V P-Channel QFET
auf Bestellung 20283 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.28 EUR
10+3.27 EUR
100+2.34 EUR
500+1.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB22P10TM fqb22p10-d.pdf
FQB22P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 6316 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.38 EUR
10+3.47 EUR
100+2.39 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH