auf Bestellung 227 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.9 EUR |
| 15+ | 3.51 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.2 EUR |
Produktrezensionen
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Technische Details FQB30N06LTM onsemi / Fairchild
Description: MOSFET N-CH 60V 32A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V, Power Dissipation (Max): 3.75W (Ta), 79W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V.
Weitere Produktangebote FQB30N06LTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| FQB30N06LTM | Hersteller : FAIRCHIL.. |
 09+ BGA |
auf Bestellung 927 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB30N06LTM | Hersteller : FAIRCHILD |
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auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQB30N06LTM | Hersteller : ON Semiconductor |
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auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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FQB30N06LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R |
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FQB30N06LTM | Hersteller : onsemi |
Description: MOSFET N-CH 60V 32A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V Power Dissipation (Max): 3.75W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V |
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FQB30N06LTM | Hersteller : onsemi |
Description: MOSFET N-CH 60V 32A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V Power Dissipation (Max): 3.75W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB30N06LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22.6A; Idm: 128A; 79W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 22.6A Pulsed drain current: 128A Power dissipation: 79W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |