auf Bestellung 8634 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 4.73 EUR |
| 13+ | 4.26 EUR |
| 25+ | 4.13 EUR |
| 100+ | 3.43 EUR |
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Technische Details FQB33N10LTM onsemi / Fairchild
Description: MOSFET N-CH 100V 33A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V, Power Dissipation (Max): 3.75W (Ta), 127W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V.
Weitere Produktangebote FQB33N10LTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
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auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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FQB33N10LTM Produktcode: 114312 |
IC > IC andere |
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FQB33N10LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FQB33N10LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Pulsed drain current: 132A Power dissipation: 127W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQB33N10LTM | Hersteller : onsemi |
Description: MOSFET N-CH 100V 33A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V Power Dissipation (Max): 3.75W (Ta), 127W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB33N10LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Pulsed drain current: 132A Power dissipation: 127W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |