FQB33N10LTM onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.34 EUR |
| 1600+ | 1.24 EUR |
| 2400+ | 1.19 EUR |
| 4000+ | 1.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQB33N10LTM onsemi
Description: MOSFET N-CH 100V 33A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V, Power Dissipation (Max): 3.75W (Ta), 127W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V.
Weitere Produktangebote FQB33N10LTM nach Preis ab 2.32 EUR bis 3.20 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQB33N10LTM | Hersteller : onsemi / Fairchild |
MOSFET 100V N-Ch QFET Logic Level |
auf Bestellung 8634 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| FQB33N10LTM |
|
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||
 |
FQB33N10LTM Produktcode: 114312
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Produkt ist nicht verfügbar
|
||||||||||||
 |
FQB33N10LTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
 |
FQB33N10LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Power dissipation: 127W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 40nC Kind of package: reel; tape Pulsed drain current: 132A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||
|
|
FQB33N10LTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Power dissipation: 127W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 40nC Kind of package: reel; tape Pulsed drain current: 132A |
Produkt ist nicht verfügbar |