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FQB5N90TM

FQB5N90TM onsemi


fqb5n90-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 900V 5.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.15 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FQB5N90TM onsemi

Description: MOSFET N-CH 900V 5.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V, Power Dissipation (Max): 3.13W (Ta), 158W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V.

Weitere Produktangebote FQB5N90TM nach Preis ab 2.25 EUR bis 3.70 EUR

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FQB5N90TM FQB5N90TM Hersteller : onsemi fqb5n90-d.pdf Description: MOSFET N-CH 900V 5.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 1089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+3.22 EUR
100+2.59 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FQB5N90TM FQB5N90TM Hersteller : ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197409012D40259&compId=FQB5N90.pdf?ci_sign=794e2f9b0f6a0883154a97fda2c236ae9e6d9415 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 736 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.47 EUR
24+3.07 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
FQB5N90TM FQB5N90TM Hersteller : ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197409012D40259&compId=FQB5N90.pdf?ci_sign=794e2f9b0f6a0883154a97fda2c236ae9e6d9415 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 736 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
24+3.07 EUR
31+2.37 EUR
32+2.25 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
FQB5N90TM FQB5N90TM Hersteller : onsemi / Fairchild fqb5n90-d.pdf MOSFETs 900V N-Channel QFET
auf Bestellung 13567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.70 EUR
10+3.48 EUR
100+2.82 EUR
800+2.52 EUR
2400+2.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQB5N90TM FQB5N90TM Hersteller : ON Semiconductor fqb5n90-d.pdf Trans MOSFET N-CH 900V 5.4A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 18400 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH