| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.08 EUR |
| 10+ | 3.86 EUR |
| 100+ | 3.09 EUR |
| 500+ | 2.95 EUR |
| 800+ | 2.56 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
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Technische Details FQB5N90TM onsemi / Fairchild
Description: MOSFET N-CH 900V 5.4A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 3.13W (Ta), 158W (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote FQB5N90TM nach Preis ab 3 EUR bis 8.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FQB5N90TM | onsemi |
 Description: MOSFET N-CH 900V 5.4A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V Power Dissipation (Max): 3.13W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
auf Bestellung 486 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB5N90TM | onsemi |
MOSFETs 900V N-Channel QFET |
auf Bestellung 11161 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB5N90TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK Mounting: SMD Drain current: 3.42A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: D2PAK On-state resistance: 2.3Ω Power dissipation: 158W Gate charge: 40nC Polarisation: unipolar Technology: QFET® |
auf Bestellung 678 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FQB5N90TM |
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Hersteller: onsemi
Description: MOSFET N-CH 900V 5.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: MOSFET N-CH 900V 5.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 486 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.02 EUR |
| 10+ | 5.28 EUR |
| 50+ | 4.09 EUR |
| 100+ | 3.72 EUR |
| FQB5N90TM |
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Hersteller: onsemi
MOSFETs 900V N-Channel QFET
MOSFETs 900V N-Channel QFET
auf Bestellung 11161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.04 EUR |
| 10+ | 4.13 EUR |
| 100+ | 3.64 EUR |
| 500+ | 3 EUR |
| FQB5N90TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Mounting: SMD
Drain current: 3.42A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 2.3Ω
Power dissipation: 158W
Gate charge: 40nC
Polarisation: unipolar
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Mounting: SMD
Drain current: 3.42A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 2.3Ω
Power dissipation: 158W
Gate charge: 40nC
Polarisation: unipolar
Technology: QFET®
auf Bestellung 678 Stücke:
Lieferzeit 14-21 Tag (e)