FQB6N80TM

FQB6N80TM ON Semiconductor


3940191598609755fqb6n80-d.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH 800V 5.8A 3-Pin(2+Tab) D2PAK T/R
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Technische Details FQB6N80TM ON Semiconductor

Description: MOSFET N-CH 800V 5.8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc), Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.9A, 10V, Power Dissipation (Max): 3.13W (Ta), 158W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V.

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FQB6N80TM FQB6N80TM Hersteller : ON Semiconductor 3940191598609755fqb6n80-d.pdf Trans MOSFET N-CH 800V 5.8A 3-Pin(2+Tab) D2PAK T/R
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FQB6N80TM Hersteller : ON Semiconductor 3940191598609755fqb6n80-d.pdf Trans MOSFET N-CH 800V 5.8A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
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FQB6N80TM FQB6N80TM Hersteller : onsemi fqb6n80-d.pdf Description: MOSFET N-CH 800V 5.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.9A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
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FQB6N80TM FQB6N80TM Hersteller : onsemi fqb6n80-d.pdf Description: MOSFET N-CH 800V 5.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.9A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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FQB6N80TM FQB6N80TM Hersteller : onsemi / Fairchild FQB6N80_D-2313450.pdf MOSFET 800V N-Channel QFET
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