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FQD12N20LTM-F085P

FQD12N20LTM-F085P onsemi


FQD12N20L-D.PDF Hersteller: onsemi
Description: MOSFET N-CH 200V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
auf Bestellung 2500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.75 EUR
Mindestbestellmenge: 2500
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Technische Details FQD12N20LTM-F085P onsemi

Description: MOSFET N-CH 200V 9A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V.

Weitere Produktangebote FQD12N20LTM-F085P nach Preis ab 1.84 EUR bis 3.87 EUR

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FQD12N20LTM-F085P FQD12N20LTM-F085P Hersteller : onsemi FQD12N20L-D.PDF Description: MOSFET N-CH 200V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
auf Bestellung 4804 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.87 EUR
10+ 3.21 EUR
100+ 2.56 EUR
500+ 2.17 EUR
1000+ 1.84 EUR
Mindestbestellmenge: 7
FQD12N20LTM-F085P FQD12N20LTM-F085P Hersteller : ON Semiconductor fqd12n20ltm_f085.pdf Trans MOSFET N-CH 200V 9A Automotive 3-Pin(2+Tab) DPAK
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FQD12N20LTM-F085P FQD12N20LTM-F085P Hersteller : ON Semiconductor fqd12n20ltm_f085.pdf Trans MOSFET N-CH 200V 9A Automotive 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
FQD12N20LTM-F085P FQD12N20LTM-F085P Hersteller : onsemi / Fairchild FQD12N20L_D-1142617.pdf MOSFET 200V /9A/0.28 OHM @ VGS=10V
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