FQD12N20LTM-F085P onsemi
Hersteller: onsemiDescription: MOSFET N-CH 200V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.11 EUR |
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Technische Details FQD12N20LTM-F085P onsemi
Description: MOSFET N-CH 200V 9A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote FQD12N20LTM-F085P nach Preis ab 1.22 EUR bis 3.78 EUR
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FQD12N20LTM-F085P | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK Automotive AEC-Q101 |
auf Bestellung 472 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD12N20LTM-F085P | Hersteller : onsemi |
Description: MOSFET N-CH 200V 9A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4791 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD12N20LTM-F085P | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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FQD12N20LTM-F085P | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 9A Automotive 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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FQD12N20LTM-F085P | Hersteller : onsemi / Fairchild |
MOSFET 200V /9A/0.28 OHM @ VGS=10V |
Produkt ist nicht verfügbar |