FQD1N80TM onsemi
Hersteller: onsemi
Description: MOSFET N-CH 800V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQD1N80TM onsemi
Description: MOSFET N-CH 800V 1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V.
Weitere Produktangebote FQD1N80TM nach Preis ab 0.65 EUR bis 1.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQD1N80TM | Hersteller : Fairchild |
Transistor N-Channel MOSFET; 800V; 30V; 20Ohm; 1A; 45W; -55°C ~ 150°C; FQD1N80TM TFQD1n80tm Anzahl je Verpackung: 25 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
 |
FQD1N80TM | Hersteller : onsemi / Fairchild |
MOSFETs Power MOSFET |
auf Bestellung 1991 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FQD1N80TM | Hersteller : onsemi |
Description: MOSFET N-CH 800V 1A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V |
auf Bestellung 4655 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FQD1N80TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
FQD1N80TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 1A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| FQD1N80TM | Hersteller : Fairchild/ON Semiconductor |
N-канальний ПТ, Udss, В = 800, Id = 1 А, Ptot, Вт = 2,5, Тип монт. = smd, Ciss, пФ @ Uds, В = 195 @ 25, Qg, нКл = 7,2 @ 10 В, Rds = 20 Ом @ 500 мA, 10 В, Tексп, °C = -55...+150, Ugs(th) = 5 В @ 250 мкА,... Група товару: Транзистори Корпус: DPAK-3 Од. вим: Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| FQD1N80TM | Hersteller : On Semiconductor |
N-MOSFET unipolar 800V 0.63A 45W DPAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |