Produkte > ONSEMI > FQD1N80TM
FQD1N80TM

FQD1N80TM onsemi

fqu1n80-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 800V 1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.64 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FQD1N80TM onsemi

Description: MOSFET N-CH 800V 1A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote FQD1N80TM nach Preis ab 0.47 EUR bis 1.95 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FQD1N80TM FQD1N80TM Hersteller : ONSEMI FQD1N80.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.63A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
116+0.62 EUR
129+0.56 EUR
500+0.52 EUR
1000+0.47 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N80TM FQD1N80TM Hersteller : Fairchild info-tfqd1n80tm.pdf Transistor N-Channel MOSFET; 800V; 30V; 20Ohm; 1A; 45W; -55°C ~ 150°C; FQD1N80TM TFQD1n80tm
Anzahl je Verpackung: 25 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+0.85 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N80TM FQD1N80TM Hersteller : onsemi / Fairchild FQU1N80-D.pdf MOSFETs Power MOSFET
auf Bestellung 1991 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.92 EUR
10+1.25 EUR
100+0.88 EUR
500+0.79 EUR
1000+0.72 EUR
2500+0.66 EUR
5000+0.65 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N80TM FQD1N80TM Hersteller : onsemi fqu1n80-d.pdf Description: MOSFET N-CH 800V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
auf Bestellung 4655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
14+1.28 EUR
100+0.89 EUR
500+0.78 EUR
1000+0.72 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH