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FQD1N80TM

FQD1N80TM onsemi

fqu1n80-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 800V 1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.79 EUR
5000+0.73 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FQD1N80TM onsemi

Description: MOSFET N-CH 800V 1A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote FQD1N80TM nach Preis ab 0.56 EUR bis 3.08 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FQD1N80TM FQD1N80TM ONSEMI FQD1N80.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.63A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1150 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.9 EUR
116+0.74 EUR
129+0.67 EUR
500+0.62 EUR
1000+0.56 EUR
Mindestbestellmenge: 95 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N80TM FQD1N80TM Fairchild info-tfqd1n80tm.pdf Transistor N-Channel MOSFET; 800V; 30V; 20Ohm; 1A; 45W; -55°C ~ 150°C; FQD1N80TM TFQD1n80tm
Anzahl je Verpackung: 25 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.01 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N80TM FQD1N80TM onsemi / Fairchild FQU1N80-D.pdf MOSFETs Power MOSFET
auf Bestellung 1991 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.28 EUR
10+1.49 EUR
100+1.05 EUR
500+0.94 EUR
1000+0.86 EUR
2500+0.79 EUR
5000+0.77 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N80TM FQD1N80TM onsemi fqu1n80-d.pdf Description: MOSFET N-CH 800V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
auf Bestellung 11463 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.08 EUR
11+1.95 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N80TM FQD1N80.pdf
FQD1N80TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.63A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1150 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
95+0.9 EUR
116+0.74 EUR
129+0.67 EUR
500+0.62 EUR
1000+0.56 EUR
Mindestbestellmenge: 95 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N80TM info-tfqd1n80tm.pdf
FQD1N80TM
Hersteller: Fairchild
Transistor N-Channel MOSFET; 800V; 30V; 20Ohm; 1A; 45W; -55°C ~ 150°C; FQD1N80TM TFQD1n80tm
Anzahl je Verpackung: 25 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
50+1.01 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N80TM FQU1N80-D.pdf
FQD1N80TM
Hersteller: onsemi / Fairchild
MOSFETs Power MOSFET
auf Bestellung 1991 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.28 EUR
10+1.49 EUR
100+1.05 EUR
500+0.94 EUR
1000+0.86 EUR
2500+0.79 EUR
5000+0.77 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N80TM fqu1n80-d.pdf
FQD1N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
auf Bestellung 11463 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.08 EUR
11+1.95 EUR
100+1.3 EUR
500+1.02 EUR
1000+0.93 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH