FQD30N06TF_F080 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.7A DPAK
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
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Technische Details FQD30N06TF_F080 onsemi
Description: MOSFET N-CH 60V 22.7A DPAK, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA.