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FQD30N06TM

FQD30N06TM onsemi

fqd30n06-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.7 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FQD30N06TM onsemi

Description: MOSFET N-CH 60V 22.7A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V.

Weitere Produktangebote FQD30N06TM nach Preis ab 0.62 EUR bis 2.75 EUR

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FQD30N06TM FQD30N06TM ONSEMI fqd30n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1201 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
101+0.71 EUR
500+0.62 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
FQD30N06TM FQD30N06TM onsemi fqd30n06-d.pdf Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.55 EUR
11+1.62 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.78 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
FQD30N06TM FQD30N06TM onsemi fqd30n06-d.pdf MOSFETs 60V 22.7A N-CHANNEL QFET MOSFET
auf Bestellung 6321 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.75 EUR
10+1.74 EUR
100+1.16 EUR
500+0.92 EUR
1000+0.84 EUR
2500+0.72 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FQD30N06TM ON Semiconductor fqd30n06-d.pdf
auf Bestellung 5799 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FQD30N06TM fqd30n06-d.pdf
FQD30N06TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
101+0.71 EUR
500+0.62 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
FQD30N06TM fqd30n06-d.pdf
FQD30N06TM
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
11+1.62 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.78 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
FQD30N06TM fqd30n06-d.pdf
FQD30N06TM
Hersteller: onsemi
MOSFETs 60V 22.7A N-CHANNEL QFET MOSFET
auf Bestellung 6321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.75 EUR
10+1.74 EUR
100+1.16 EUR
500+0.92 EUR
1000+0.84 EUR
2500+0.72 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FQD30N06TM fqd30n06-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 5799 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH