FQD30N06TM onsemi / Fairchild
auf Bestellung 9998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.01 EUR |
| 10+ | 0.95 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.77 EUR |
| 2500+ | 0.66 EUR |
| 5000+ | 0.65 EUR |
Produktrezensionen
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Technische Details FQD30N06TM onsemi / Fairchild
Description: MOSFET N-CH 60V 22.7A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V.
Weitere Produktangebote FQD30N06TM nach Preis ab 0.79 EUR bis 1.07 EUR
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FQD30N06TM | Hersteller : onsemi |
 Description: MOSFET N-CH 60V 22.7A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V |
auf Bestellung 1989 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQD30N06TM | Hersteller : ON Semiconductor |
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auf Bestellung 5799 Stücke: Lieferzeit 21-28 Tag (e) |
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FQD30N06TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 22.7A 3-Pin(2+Tab) DPAK T/R |
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FQD30N06TM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 22.7A 3-Pin(2+Tab) DPAK T/R |
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FQD30N06TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14.3A Pulsed drain current: 90.8A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD30N06TM | Hersteller : onsemi |
Description: MOSFET N-CH 60V 22.7A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD30N06TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14.3A Pulsed drain current: 90.8A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |