FQD3P50TM
Produktcode: 86765
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote FQD3P50TM nach Preis ab 0.96 EUR bis 3.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FQD3P50TM | onsemi |
Description: MOSFET P-CH 500V 2.1A DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD3P50TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD3P50TM | onsemi / Fairchild |
MOSFETs 500V P-Channel QFET |
auf Bestellung 31566 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD3P50TM | onsemi |
MOSFETs 500V P-Channel QFET |
auf Bestellung 22839 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD3P50TM | onsemi |
Description: MOSFET P-CH 500V 2.1A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V |
auf Bestellung 12531 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD3P50TM | ONSEMI |
Description: ONSEMI - FQD3P50TM - Leistungs-MOSFET, p-Kanal, 500 V, 2.1 A, 3.9 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 500V rohsCompliant: Y-EX Dauer-Drainstrom Id: 2.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 2.5W SVHC: Lead (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: QFET productTraceability: No usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 3.9ohm |
auf Bestellung 7309 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FQD3P50TM |
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Hersteller: onsemi
Description: MOSFET P-CH 500V 2.1A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Description: MOSFET P-CH 500V 2.1A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.04 EUR |
| 5000+ | 0.96 EUR |
| FQD3P50TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 2.58 EUR |
| 44+ | 1.94 EUR |
| FQD3P50TM |
|
Hersteller: onsemi / Fairchild
MOSFETs 500V P-Channel QFET
MOSFETs 500V P-Channel QFET
auf Bestellung 31566 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.75 EUR |
| 10+ | 1.93 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.09 EUR |
| 2500+ | 1.08 EUR |
| FQD3P50TM |
|
Hersteller: onsemi
MOSFETs 500V P-Channel QFET
MOSFETs 500V P-Channel QFET
auf Bestellung 22839 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.86 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.32 EUR |
| FQD3P50TM |
|
Hersteller: onsemi
Description: MOSFET P-CH 500V 2.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Description: MOSFET P-CH 500V 2.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
auf Bestellung 12531 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.94 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.24 EUR |
| FQD3P50TM |
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Hersteller: ONSEMI
Description: ONSEMI - FQD3P50TM - Leistungs-MOSFET, p-Kanal, 500 V, 2.1 A, 3.9 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 2.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 2.5W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: No
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 3.9ohm
Description: ONSEMI - FQD3P50TM - Leistungs-MOSFET, p-Kanal, 500 V, 2.1 A, 3.9 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 2.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 2.5W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: QFET
productTraceability: No
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 3.9ohm
auf Bestellung 7309 Stücke:
Lieferzeit 14-21 Tag (e)