FQD3P50TM ONSEMI
Hersteller: ONSEMICategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2465 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 58+ | 1.24 EUR |
| 64+ | 1.13 EUR |
| 79+ | 0.92 EUR |
| 82+ | 0.87 EUR |
| 500+ | 0.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQD3P50TM ONSEMI
Description: MOSFET P-CH 500V 2.1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V.
Weitere Produktangebote FQD3P50TM nach Preis ab 0.84 EUR bis 3.38 EUR
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FQD3P50TM | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2465 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD3P50TM | Hersteller : onsemi / Fairchild |
MOSFET 500V P-Channel QFET |
auf Bestellung 42942 Stücke: Lieferzeit 14-28 Tag (e) |
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FQD3P50TM Produktcode: 86765 |
Transistoren > Transistoren P-Kanal-Feld |
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FQD3P50TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 500V 2.1A 3-Pin(2+Tab) DPAK T/R |
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FQD3P50TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 500V 2.1A 3-Pin(2+Tab) DPAK T/R |
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FQD3P50TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 500V 2.1A 3-Pin(2+Tab) DPAK T/R |
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FQD3P50TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 500V 2.1A 3-Pin(2+Tab) DPAK T/R |
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FQD3P50TM | Hersteller : onsemi |
Description: MOSFET P-CH 500V 2.1A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V |
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FQD3P50TM | Hersteller : onsemi |
Description: MOSFET P-CH 500V 2.1A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V |
Produkt ist nicht verfügbar |