FQD5N60CTM onsemi
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.95 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FQD5N60CTM onsemi
Description: MOSFET N-CH 600V 2.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 49W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.
Weitere Produktangebote FQD5N60CTM nach Preis ab 0.8 EUR bis 4.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FQD5N60CTM | ON Semiconductor |
Trans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD5N60CTM | ON Semiconductor |
Trans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD5N60CTM | onsemi |
Description: MOSFET N-CH 600V 2.8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 2655 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD5N60CTM | onsemi |
MOSFETs 600V N-Channel Adv Q-FET C-Series |
auf Bestellung 43202 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQD5N60CTM |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 111+ | 1.63 EUR |
| 113+ | 1.57 EUR |
| 145+ | 1.2 EUR |
| 250+ | 0.88 EUR |
| FQD5N60CTM |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 86+ | 2.12 EUR |
| 111+ | 1.57 EUR |
| 113+ | 1.49 EUR |
| 145+ | 1.11 EUR |
| 250+ | 0.8 EUR |
| FQD5N60CTM |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 2655 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.75 EUR |
| 10+ | 2.38 EUR |
| 50+ | 1.8 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.27 EUR |
| FQD5N60CTM |
|
Hersteller: onsemi
MOSFETs 600V N-Channel Adv Q-FET C-Series
MOSFETs 600V N-Channel Adv Q-FET C-Series
auf Bestellung 43202 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.11 EUR |
| 10+ | 2.57 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.19 EUR |
| 2500+ | 1.02 EUR |