
FQD6N40CTM onsemi

Description: MOSFET N-CH 400V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2500+ | 0.84 EUR |
5000+ | 0.81 EUR |
7500+ | 0.78 EUR |
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Technische Details FQD6N40CTM onsemi
Description: MOSFET N-CH 400V 4.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V, Power Dissipation (Max): 2.5W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V.
Weitere Produktangebote FQD6N40CTM nach Preis ab 0.81 EUR bis 1.92 EUR
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FQD6N40CTM | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.7A Power dissipation: 48W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1496 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD6N40CTM | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.7A Power dissipation: 48W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1496 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD6N40CTM | Hersteller : onsemi / Fairchild |
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auf Bestellung 12698 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD6N40CTM | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
auf Bestellung 8489 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD6N40CTM | Hersteller : ON Semiconductor |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD6N40CTM | Hersteller : ON-Semicoductor |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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