FQD7P20TF onsemi
Hersteller: onsemi
Description: MOSFET P-CH 200V 5.7A DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 2.85A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Produktrezensionen
Produktbewertung abgeben
Technische Details FQD7P20TF onsemi
Description: MOSFET P-CH 200V 5.7A DPAK, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 55W (Tc), Rds On (Max) @ Id, Vgs: 690mOhm @ 2.85A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA.