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FQD9N25TM-F080

FQD9N25TM-F080 onsemi / Fairchild


FQU9N25_D-2314258.pdf Hersteller: onsemi / Fairchild
MOSFET Trans MOS N-Ch 250V 7.4A 3-Pin 2+Tab
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Technische Details FQD9N25TM-F080 onsemi / Fairchild

Description: MOSFET N-CH 250V 7.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V, Power Dissipation (Max): 2.5W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.

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FQD9N25TM-F080 FQD9N25TM-F080 Hersteller : ON Semiconductor fqu9n25.pdf Trans MOSFET N-CH 250V 7.4A 3-Pin(2+Tab) DPAK T/R
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FQD9N25TM-F080 FQD9N25TM-F080 Hersteller : ONSEMI ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Anzahl je Verpackung: 1 Stücke
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FQD9N25TM-F080 FQD9N25TM-F080 Hersteller : onsemi ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 250V 7.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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FQD9N25TM-F080 FQD9N25TM-F080 Hersteller : ONSEMI ONSM-S-A0003588092-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 29.6A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH