FQI12N50TU onsemi
Hersteller: onsemi
Description: MOSFET N-CH 500V 12.1A I2PAK
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 179W (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 6.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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Technische Details FQI12N50TU onsemi
Description: MOSFET N-CH 500V 12.1A I2PAK, Supplier Device Package: TO-262 (I2PAK), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 3.13W (Ta), 179W (Tc), Rds On (Max) @ Id, Vgs: 490mOhm @ 6.05A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete.