FQI19N20CTU onsemi
Hersteller: onsemi
Description: MOSFET N-CH 200V 19A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
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Technische Details FQI19N20CTU onsemi
Description: MOSFET N-CH 200V 19A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Supplier Device Package: I2PAK (TO-262), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.13W (Ta), 139W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube, Drive Voltage (Max Rds On, Min Rds On): 10V.