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FQI7N60TU

FQI7N60TU onsemi

fqi7n60-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 600V 7.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.1 EUR
10+ 5.9 EUR
100+ 4.7 EUR
500+ 3.97 EUR
Mindestbestellmenge: 4
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Technische Details FQI7N60TU onsemi

Description: MOSFET N-CH 600V 7.4A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 3.7A, 10V, Power Dissipation (Max): 3.13W (Ta), 142W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V.

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FQI7N60TU FQI7N60TU Hersteller : ON Semiconductor / Fairchild FQI7N60-D-1809624.pdf MOSFET 600V N-Channel QFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-28 Tag (e)
FQI7N60TU FQI7N60TU Hersteller : ON Semiconductor fqi7n60-d.pdf Trans MOSFET N-CH 600V 7.4A 3-Pin(3+Tab) I2PAK Tube
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