FQI8N60CTU ON Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 216+ | 2.54 EUR |
| 500+ | 2.2 EUR |
| 1000+ | 1.95 EUR |
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Technische Details FQI8N60CTU ON Semiconductor
Description: MOSFET N-CH 600V 7.5A I2PAK, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V, Power Dissipation (Max): 3.13W (Ta), 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V.
Weitere Produktangebote FQI8N60CTU nach Preis ab 1.68 EUR bis 4.21 EUR
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FQI8N60CTU | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Tube |
auf Bestellung 5985 Stücke: Lieferzeit 14-21 Tag (e) |
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FQI8N60CTU | Hersteller : onsemi |
Description: MOSFET N-CH 600V 7.5A I2PAK Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V |
auf Bestellung 24810 Stücke: Lieferzeit 10-14 Tag (e) |
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FQI8N60CTU | Hersteller : onsemi / Fairchild |
MOSFET 600V N-Channel Adv Q-FET C-Series |
auf Bestellung 988 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQI8N60CTU | Hersteller : FAIRCHILD |
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 964 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQI8N60CTU | Hersteller : FAIRCHILD |
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 453 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQI8N60CTU | Hersteller : FAIRCHILD |
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 23000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQI8N60CTU | Hersteller : FAIRCHILD |
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQI8N60CTU | Hersteller : FAIRCHILD |
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 312 Stücke: Lieferzeit 14-21 Tag (e) |
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FQI8N60CTU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) I2PAK Tube |
Produkt ist nicht verfügbar |
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FQI8N60CTU | Hersteller : onsemi |
Description: MOSFET N-CH 600V 7.5A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V |
Produkt ist nicht verfügbar |