
auf Bestellung 759 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 2.31 EUR |
10+ | 2.09 EUR |
100+ | 1.62 EUR |
500+ | 1.34 EUR |
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Technische Details FQP2N40-F080 onsemi / Fairchild
Description: MOSFET N-CH 400V 1.8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 5.8Ohm @ 900mA, 10V, Power Dissipation (Max): 40W (Ta), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Weitere Produktangebote FQP2N40-F080
Foto | Bezeichnung | Hersteller | Beschreibung |
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FQP2N40-F080 | Hersteller : ON Semiconductor |
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FQP2N40-F080 | Hersteller : ONSEMI |
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FQP2N40-F080 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 5.8Ohm @ 900mA, 10V Power Dissipation (Max): 40W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
Produkt ist nicht verfügbar |