auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 2.38 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.53 EUR |
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Technische Details FQP3N50C-F080 onsemi / Fairchild
Description: MOSFET N-CH 500V 1.8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V.
Weitere Produktangebote FQP3N50C-F080
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQP3N50C-F080 | Hersteller : ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 1.8A; Idm: 12A; 62W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.8A Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 62W Gate charge: 13nC Pulsed drain current: 12A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP3N50C-F080 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP3N50C-F080 | Hersteller : onsemi |
Description: MOSFET N-CH 500V 1.8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQP3N50C-F080 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.8A; Idm: 12A; 62W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.8A Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 62W Gate charge: 13nC Pulsed drain current: 12A |
Produkt ist nicht verfügbar |