FQP6N60C ON Semiconductor
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 391+ | 1.39 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.17 EUR |
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Technische Details FQP6N60C ON Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 5, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V.
Weitere Produktangebote FQP6N60C nach Preis ab 1.17 EUR bis 1.61 EUR
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FQP6N60C | Hersteller : Fairchild Semiconductor |
 Description: POWER FIELD-EFFECT TRANSISTOR, 5Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V |
auf Bestellung 20356 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQP6N60C | Hersteller : FAIRCHILD |
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP6N60C | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP6N60C | Hersteller : onsemi |
Description: MOSFET N-CH 600V 5.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQP6N60C | Hersteller : onsemi / Fairchild |
MOSFETs 600V N-Channel Adv Q-FET C-Series |
Produkt ist nicht verfügbar |