auf Bestellung 1000 Stücke:
Lieferzeit 189-203 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 7.38 EUR |
10+ | 7.02 EUR |
50+ | 5.85 EUR |
100+ | 5.02 EUR |
500+ | 4.45 EUR |
1000+ | 3.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQP8N80C onsemi / Fairchild
Description: MOSFET N-CH 800V 8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V.
Weitere Produktangebote FQP8N80C
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FQP8N80C | Hersteller : Fairchild |
auf Bestellung 2800 Stücke: Lieferzeit 21-28 Tag (e) |
|||
FQP8N80C | Hersteller : FSC | 09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
||
FQP8N80C | Hersteller : ON Semiconductor |
auf Bestellung 13000 Stücke: Lieferzeit 21-28 Tag (e) |
|||
FQP8N80C | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
||
FQP8N80C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
FQP8N80C | Hersteller : onsemi |
Description: MOSFET N-CH 800V 8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 4A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
Produkt ist nicht verfügbar |
||
FQP8N80C | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |