FQPF13N06L onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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Technische Details FQPF13N06L onsemi
Description: MOSFET N-CH 60V 10A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V, Power Dissipation (Max): 24W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote FQPF13N06L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQPF13N06L | Hersteller : onsemi / Fairchild |
MOSFETs 60V N-Channel QFET Logic Level |
Produkt ist nicht verfügbar |
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FQPF13N06L | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.1A Pulsed drain current: 40A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |