auf Bestellung 1478 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.76 EUR |
| 10+ | 1.42 EUR |
| 100+ | 1.12 EUR |
| 10000+ | 0.78 EUR |
Produktrezensionen
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Technische Details FQPF13N06L onsemi / Fairchild
Description: MOSFET N-CH 60V 10A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V, Power Dissipation (Max): 24W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote FQPF13N06L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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FQPF13N06L | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FQPF13N06L | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.1A Pulsed drain current: 40A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQPF13N06L | Hersteller : onsemi |
Description: MOSFET N-CH 60V 10A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQPF13N06L | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; Idm: 40A; 24W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.1A Pulsed drain current: 40A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |