Weitere Produktangebote FQPF13N50CF nach Preis ab 2.3 EUR bis 6.11 EUR
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FQPF13N50CF | ON Semiconductor |
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF13N50CF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 52A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF13N50CF | onsemi |
Description: MOSFET N-CH 500V 13A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 6.5A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 851 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF13N50CF | onsemi |
MOSFETs HIGH VOLTAGE |
auf Bestellung 2031 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQPF13N50CF |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 3.35 EUR |
| FQPF13N50CF |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.09 EUR |
| 30+ | 2.39 EUR |
| FQPF13N50CF |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 13A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 13A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.07 EUR |
| 50+ | 3.1 EUR |
| 100+ | 2.81 EUR |
| 500+ | 2.3 EUR |
| FQPF13N50CF |
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Hersteller: onsemi
MOSFETs HIGH VOLTAGE
MOSFETs HIGH VOLTAGE
auf Bestellung 2031 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 6.11 EUR |
| 10+ | 3.12 EUR |
| 100+ | 2.82 EUR |





