FQPF19N10 onsemi
Hersteller: onsemiDescription: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6.8A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
auf Bestellung 2860 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 489+ | 1.46 EUR |
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Technische Details FQPF19N10 onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 6.8A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V.
Weitere Produktangebote FQPF19N10 nach Preis ab 1.45 EUR bis 3.15 EUR
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FQPF19N10 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 100V 13.6A TO220F Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 6.8A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
auf Bestellung 582 Stücke: Lieferzeit 21-28 Tag (e) |
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FQPF19N10 | Hersteller : ON Semiconductor |
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FQPF19N10 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.6A; Idm: 54.4A; 38W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 54.4A Drain-source voltage: 100V Drain current: 9.6A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 38W Anzahl je Verpackung: 1 Stücke |
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FQPF19N10 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 13.6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 6.8A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
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FQPF19N10 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.6A; Idm: 54.4A; 38W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 54.4A Drain-source voltage: 100V Drain current: 9.6A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 38W |
Produkt ist nicht verfügbar |