FQPF9N90CT ON Semiconductor
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.76 EUR |
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Technische Details FQPF9N90CT ON Semiconductor
Description: MOSFET N-CH 900V 8A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V.
Weitere Produktangebote FQPF9N90CT nach Preis ab 2.25 EUR bis 6.95 EUR
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FQPF9N90CT | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF9N90CT | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 67600 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF9N90CT | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 67600 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF9N90CT | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Pulsed drain current: 32A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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FQPF9N90CT | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.8A Pulsed drain current: 32A Power dissipation: 68W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF9N90CT | Hersteller : onsemi / Fairchild |
MOSFETs 900V N-Chan Advance Q-FET C-Series |
auf Bestellung 2545 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF9N90CT | Hersteller : onsemi |
Description: MOSFET N-CH 900V 8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
auf Bestellung 342 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF9N90CT Produktcode: 148086
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Transistoren > MOSFET N-CH |
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FQPF9N90CT | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |