FQT4N20LTF ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.46 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
4000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FQT4N20LTF ON Semiconductor
Description: MOSFET N-CH 200V 850MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 850mA (Tc), Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V, Power Dissipation (Max): 2.2W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223-4, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V.
Weitere Produktangebote FQT4N20LTF nach Preis ab 0.42 EUR bis 1.69 EUR
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FQT4N20LTF | ON Semiconductor |
 Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQT4N20LTF | onsemi |
Description: MOSFET N-CH 200V 850MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V Power Dissipation (Max): 2.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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FQT4N20LTF | ON Semiconductor |
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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FQT4N20LTF | ON Semiconductor |
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 15280 Stücke: Lieferzeit 14-21 Tag (e) |
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FQT4N20LTF | onsemi |
Description: MOSFET N-CH 200V 850MA SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V Power Dissipation (Max): 2.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
auf Bestellung 4016 Stücke: Lieferzeit 10-14 Tag (e) |
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FQT4N20LTF | onsemi / Fairchild |
MOSFETs 200V Single |
auf Bestellung 28053 Stücke: Lieferzeit 10-14 Tag (e) |
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FQT4N20LTF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.68A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3128 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| FQT4N20LTF | TECH PUBLIC |
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R FQT4N20LTF-TP TFQT4n20ltf Anzahl je Verpackung: 50 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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| FQT4N20LTF |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.48 EUR |
| 8000+ | 0.44 EUR |
| 24000+ | 0.42 EUR |
| FQT4N20LTF |
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Hersteller: onsemi
Description: MOSFET N-CH 200V 850MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Description: MOSFET N-CH 200V 850MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.5 EUR |
| FQT4N20LTF |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.67 EUR |
| FQT4N20LTF |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 15280 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 213+ | 0.83 EUR |
| FQT4N20LTF |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 850MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Description: MOSFET N-CH 200V 850MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
auf Bestellung 4016 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.63 EUR |
| 18+ | 1.23 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.62 EUR |
| 2000+ | 0.57 EUR |
| FQT4N20LTF |
|
Hersteller: onsemi / Fairchild
MOSFETs 200V Single
MOSFETs 200V Single
auf Bestellung 28053 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.69 EUR |
| 10+ | 1.19 EUR |
| 100+ | 0.84 EUR |
| 4000+ | 0.74 EUR |
| 8000+ | 0.73 EUR |
| 24000+ | 0.71 EUR |
| FQT4N20LTF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3128 Stücke:
Lieferzeit 14-21 Tag (e)
| FQT4N20LTF |
|
Hersteller: TECH PUBLIC
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R FQT4N20LTF-TP TFQT4n20ltf
Anzahl je Verpackung: 50 Stücke
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R FQT4N20LTF-TP TFQT4n20ltf
Anzahl je Verpackung: 50 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.23 EUR |