FQU10N20CTU ON Semiconductor
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 165+ | 0.89 EUR |
| 222+ | 0.64 EUR |
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Technische Details FQU10N20CTU ON Semiconductor
Description: MOSFET N-CH 200V 7.8A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
Weitere Produktangebote FQU10N20CTU nach Preis ab 0.68 EUR bis 1.08 EUR
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FQU10N20CTU | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 443 Stücke: Lieferzeit 14-21 Tag (e) |
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FQU10N20CTU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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FQU10N20CTU | Hersteller : onsemi |
Description: MOSFET N-CH 200V 7.8A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQU10N20CTU | Hersteller : onsemi / Fairchild |
MOSFETs N-CH/200V/10A/QFET |
Produkt ist nicht verfügbar |