FQU1N80TU onsemi
Hersteller: onsemi
Description: MOSFET N-CH 800V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Description: MOSFET N-CH 800V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
auf Bestellung 4772 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.65 EUR |
100+ | 1.31 EUR |
500+ | 1.11 EUR |
1000+ | 0.9 EUR |
2000+ | 0.85 EUR |
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Technische Details FQU1N80TU onsemi
Description: MOSFET N-CH 800V 1A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: I-PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V.
Weitere Produktangebote FQU1N80TU nach Preis ab 1.53 EUR bis 2.63 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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FQU1N80TU | Hersteller : onsemi / Fairchild | MOSFET 800V Single |
auf Bestellung 5708 Stücke: Lieferzeit 14-28 Tag (e) |
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FQU1N80TU |
auf Bestellung 4758 Stücke: Lieferzeit 21-28 Tag (e) |
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FQU1N80TU | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 1A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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FQU1N80TU | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 1A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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FQU1N80TU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.63A Pulsed drain current: 4A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: THT Gate charge: 7.2nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQU1N80TU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.63A Pulsed drain current: 4A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: THT Gate charge: 7.2nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |