
FQU2N60CTU onsemi / Fairchild
auf Bestellung 13010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 1.92 EUR |
10+ | 1.73 EUR |
100+ | 1.35 EUR |
500+ | 1.11 EUR |
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Technische Details FQU2N60CTU onsemi / Fairchild
Description: MOSFET N-CH 600V 1.9A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V.
Weitere Produktangebote FQU2N60CTU nach Preis ab 1.11 EUR bis 1.11 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FQU2N60CTU | Hersteller : Fairchild |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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FQU2N60CTU | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQU2N60CTU | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V |
Produkt ist nicht verfügbar |