FQU8P10TU onsemi

Description: MOSFET P-CH 100V 6.6A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: I-PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.