FR207GB-G Comchip Technology
auf Bestellung 588 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 0.8 EUR |
| 94+ | 0.55 EUR |
| 186+ | 0.28 EUR |
| 1000+ | 0.17 EUR |
| 2500+ | 0.14 EUR |
| 10000+ | 0.12 EUR |
| 25000+ | 0.11 EUR |
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Technische Details FR207GB-G Comchip Technology
Description: DIODE GEN PURP 1KV 2A DO15, Packaging: Tape & Box (TB), Package / Case: DO-204AC, DO-15, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-15, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote FR207GB-G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FR207GB-G | Hersteller : Comchip Technology |
 Description: DIODE GEN PURP 1KV 2A DO15Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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