| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.8 EUR |
| 10+ | 1.12 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |
| 2500+ | 0.46 EUR |
| 5000+ | 0.4 EUR |
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Technische Details FR606-G Comchip Technology
Description: DIODE GEN PURP 800V 6A R-6, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: R-6, Axial, Packaging: Tape & Box (TB), Current - Reverse Leakage @ Vr: 10 µA @ 560 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: R-6, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 150pF @ 4V, 1MHz.
Weitere Produktangebote FR606-G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| FR606G | SMC Diode Solutions |
 Description: DIODE GEN PURP 800V 6A R-6Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: R-6, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 10 µA @ 560 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 150pF @ 4V, 1MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FR606G |
|
Hersteller: SMC Diode Solutions
Description: DIODE GEN PURP 800V 6A R-6
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 560 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Description: DIODE GEN PURP 800V 6A R-6
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 560 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH