FS03MR12A6MA1LB Infineon Technologies

Description: MOSFET 6N-CH 1200V AG-HYBRIDD, Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 6 N-Channel (3-Phase Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Supplier Device Package: AG-HYBRIDD-2, Vgs(th) (Max) @ Id: 5.55V @ 240mA, Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V, Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 42600pF @ 600V, Current - Continuous Drain (Id) @ 25°C: 400A, Part Status: Active.