FS100R07N2E4B11BOSA1 Infineon Technologies

Description: IGBT MODULE 650V 125A MODULE, Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 20 mW, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 125 A, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A, Operating Temperature: -40°C ~ 150°C, Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.