FS13MR12W2M1HB70BPSA1 Infineon Technologies
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 507.57 EUR |
| 10+ | 475.73 EUR |
| 30+ | 457.49 EUR |
| 60+ | 450.4 EUR |
| 105+ | 446.9 EUR |
| 255+ | 446.83 EUR |
| 510+ | 446.79 EUR |
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Technische Details FS13MR12W2M1HB70BPSA1 Infineon Technologies
Description: SIC 6N-CH 1200V 62.5A, Packaging: Tray, Configuration: 6 N-Channel (3-Phase Bridge), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 62.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6050pF @ 800V, Rds On (Max) @ Id, Vgs: 11.7mOhm @ 62.5A, 18V, Gate Charge (Qg) (Max) @ Vgs: 200nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 28mA, Part Status: Active.
Weitere Produktangebote FS13MR12W2M1HB70BPSA1 nach Preis ab 498.87 EUR bis 498.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FS13MR12W2M1HB70BPSA1 | Hersteller : Infineon Technologies |
 Description: SIC 6N-CH 1200V 62.5APackaging: Tray Configuration: 6 N-Channel (3-Phase Bridge) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 62.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6050pF @ 800V Rds On (Max) @ Id, Vgs: 11.7mOhm @ 62.5A, 18V Gate Charge (Qg) (Max) @ Vgs: 200nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 28mA Part Status: Active |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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| FS13MR12W2M1HB70BPSA1 | Hersteller : Infineon Technologies |
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