FS17MR12W2M1HB11ABPSA2 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: FS17MR12W2M1HB11ABPSA2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 146.98 EUR |
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Technische Details FS17MR12W2M1HB11ABPSA2 Infineon Technologies
Description: FS17MR12W2M1HB11ABPSA2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (Three Phase Inverter), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 40A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V, Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V, Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 20mA.
Weitere Produktangebote FS17MR12W2M1HB11ABPSA2 nach Preis ab 163.94 EUR bis 214.44 EUR
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FS17MR12W2M1HB11ABPSA2 | Hersteller : Infineon Technologies |
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