FS200R07A02E3S6BKSA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MODULE HYBRID 28MDIP
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 694 W
Voltage - Collector Emitter Breakdown (Max): 700 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
Supplier Device Package: PG-MDIP-28
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details FS200R07A02E3S6BKSA2 Infineon Technologies
Description: IGBT MODULE HYBRID 28MDIP, Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V, Current - Collector Cutoff (Max): 100 µA, Power - Max: 694 W, Voltage - Collector Emitter Breakdown (Max): 700 V, Current - Collector (Ic) (Max): 200 A, IGBT Type: Trench Field Stop, Supplier Device Package: PG-MDIP-28, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.