auf Bestellung 231 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 76.26 EUR |
| 10+ | 70.33 EUR |
| 25+ | 63.44 EUR |
| 120+ | 59.54 EUR |
| 280+ | 56.68 EUR |
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Technische Details FS20R06VE3 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A, Case: AG-EASY750-1, Max. off-state voltage: 0.6kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 20A, Pulsed collector current: 40A, Application: Inverter, Power dissipation: 71.5W, Electrical mounting: Press-in PCB, Type of module: IGBT, Technology: EasyPACK™, Topology: IGBT half-bridge x3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote FS20R06VE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FS20R06VE3 | Hersteller : INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A Case: AG-EASY750-1 Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 40A Application: Inverter Power dissipation: 71.5W Electrical mounting: Press-in PCB Type of module: IGBT Technology: EasyPACK™ Topology: IGBT half-bridge x3 Anzahl je Verpackung: 1 Stücke |
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FS20R06VE3 | Hersteller : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 20A Case: AG-EASY750-1 Max. off-state voltage: 0.6kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 40A Application: Inverter Power dissipation: 71.5W Electrical mounting: Press-in PCB Type of module: IGBT Technology: EasyPACK™ Topology: IGBT half-bridge x3 |
Produkt ist nicht verfügbar |