Technische Details FS50R12W2T4BOMA1 Infineon Technologies
Description: IGBT MOD 1200V 83A 335W, Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 335 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 83 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, Operating Temperature: -40°C ~ 125°C, Configuration: Full Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote FS50R12W2T4BOMA1 nach Preis ab 71.26 EUR bis 86.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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FS50R12W2T4BOMA1 | Infineon Technologies |
Trans IGBT Module N-CH 1200V 83A 335W 18-Pin EASY2B-1 Tray |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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FS50R12W2T4BOMA1 | Infineon Technologies |
Trans IGBT Module N-CH 1200V 83A 335W 18-Pin EASY2B-1 Tray |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
|
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FS50R12W2T4BOMA1 | Infineon Technologies |
Description: IGBT MOD 1200V 83A 335WInput Capacitance (Cies) @ Vce: 2.8 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 335 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 83 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Operating Temperature: -40°C ~ 125°C Configuration: Full Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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| FS50R12W2T4BOMA1 |
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Hersteller: Infineon Technologies
Trans IGBT Module N-CH 1200V 83A 335W 18-Pin EASY2B-1 Tray
Trans IGBT Module N-CH 1200V 83A 335W 18-Pin EASY2B-1 Tray
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 74.52 EUR |
| FS50R12W2T4BOMA1 |
![]() |
Hersteller: Infineon Technologies
Trans IGBT Module N-CH 1200V 83A 335W 18-Pin EASY2B-1 Tray
Trans IGBT Module N-CH 1200V 83A 335W 18-Pin EASY2B-1 Tray
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 75.84 EUR |
| 5+ | 71.26 EUR |
| FS50R12W2T4BOMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 83A 335W
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 335 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 83 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 1200V 83A 335W
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 335 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 83 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 86.5 EUR |



