FS75R07U1E4BPSA1 Infineon Technologies

Description: IGBT MOD 650V 100A 275W, Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 275 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 100 A, Part Status: Not For New Designs, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A, Operating Temperature: -40°C ~ 150°C, Configuration: Full Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.