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FS75R12KS4BOSA1

FS75R12KS4BOSA1 Infineon Technologies


7726db_fs75r12ks4.pdffolderiddb3a304412b407950112b4095b0601e3fileiddb.pdf Hersteller: Infineon Technologies
Trans IGBT Module N-CH 1200V 100A 500000mW Tray
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Technische Details FS75R12KS4BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 100A 500W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 500 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V.

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FS75R12KS4BOSA1 FS75R12KS4BOSA1 Hersteller : Infineon Technologies Infineon-FS75R12KS4-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4311874536c Description: IGBT MOD 1200V 100A 500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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