FS75R12KS4BOSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A 500W
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Not For New Designs
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details FS75R12KS4BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 100A 500W, Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 500 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 100 A, Part Status: Not For New Designs, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A, Operating Temperature: -40°C ~ 125°C, Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.

