FS75R12KS4BOSA1 Infineon Technologies
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 555.46 EUR |
| 25+ | 519.54 EUR |
| 100+ | 484.84 EUR |
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Technische Details FS75R12KS4BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 100A 500W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 500 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V.
Weitere Produktangebote FS75R12KS4BOSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FS75R12KS4BOSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Module N-CH 1200V 100A 500000mW Tray |
Produkt ist nicht verfügbar |
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FS75R12KS4BOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 100A 500W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Module Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
Produkt ist nicht verfügbar |