FS8205A EVVO
Hersteller: EVVODescription: DUAL N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V
auf Bestellung 2944 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 57+ | 0.31 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
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Technische Details FS8205A EVVO
Description: DUAL N-CHANNEL ENHANCEMENT MODE, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Supplier Device Package: SOT-23-6, Configuration: 2 N-Channel, Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V.
Weitere Produktangebote FS8205A
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Verfügbarkeit |
Preis |
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| FS8205A | Hersteller : FUXINSEMI |
N-ch MOSFET 20V 6A, SOT23-6 |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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| FS8205A |
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auf Bestellung 9999999 Stücke: Lieferzeit 21-28 Tag (e) |
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FS8205A Produktcode: 139945
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FS8205A | Hersteller : EVVO |
Description: DUAL N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Configuration: 2 N-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V Vgs(th) (Max) @ Id: 1.2V @ 250µA Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 4.5V |
Produkt ist nicht verfügbar |