FS950R08A6P2BBPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT MOD 750V 950A AG-HYBRIDD-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
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Technische Details FS950R08A6P2BBPSA1 Infineon Technologies
Description: IGBT MOD 750V 950A AG-HYBRIDD-2, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A, NTC Thermistor: Yes, Supplier Device Package: AG-HYBRIDD-2, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 950 A, Voltage - Collector Emitter Breakdown (Max): 750 V, Power - Max: 870 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 80 nF @ 50 V.
Weitere Produktangebote FS950R08A6P2BBPSA1 nach Preis ab 544.58 EUR bis 587.38 EUR
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FS950R08A6P2BBPSA1 | Infineon Technologies |
IGBT Modules HYBRID PACK DRIVE G1 SI |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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| FS950R08A6P2BBPSA1 |
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Hersteller: Infineon Technologies
IGBT Modules HYBRID PACK DRIVE G1 SI
IGBT Modules HYBRID PACK DRIVE G1 SI
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 587.38 EUR |
| 12+ | 544.58 EUR |

