FTCO3V455A1 ON Semiconductor / Fairchild
Hersteller: ON Semiconductor / Fairchild
Motor / Motion / Ignition Controllers & Drivers 3-Phase Var Speed Drive Auto Power Mod
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Technische Details FTCO3V455A1 ON Semiconductor / Fairchild
Description: MOSFET 6N-CH 40V 150A MODULE, Packaging: Tube, Package / Case: 19-PowerDIP Module, Mounting Type: Through Hole, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 115W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 150A, Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V, FET Feature: Logic Level Gate, Supplier Device Package: Module.
Weitere Produktangebote FTCO3V455A1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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FTCO3V455A1 | onsemi |
Description: MOSFET 6N-CH 40V 150A MODULE Packaging: Tube Package / Case: 19-PowerDIP Module Mounting Type: Through Hole Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 115W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V FET Feature: Logic Level Gate Supplier Device Package: Module |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 44 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FTCO3V455A1 |
|
Hersteller: onsemi
Description: MOSFET 6N-CH 40V 150A MODULE
Packaging: Tube
Package / Case: 19-PowerDIP Module
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 115W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V
FET Feature: Logic Level Gate
Supplier Device Package: Module
Description: MOSFET 6N-CH 40V 150A MODULE
Packaging: Tube
Package / Case: 19-PowerDIP Module
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 115W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V
FET Feature: Logic Level Gate
Supplier Device Package: Module
Produkt ist nicht verfügbar
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen
Stück im Wert von UAH