FW216A-TL-2W onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 35V 4.5A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 64mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Supplier Device Package: 8-SOIC
auf Bestellung 212500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1268+ | 0.58 EUR |
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Technische Details FW216A-TL-2W onsemi
Description: MOSFET 2N-CH 35V 4.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, Drain to Source Voltage (Vdss): 35V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V, Rds On (Max) @ Id, Vgs: 64mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V, FET Feature: Logic Level Gate, 4V Drive, Supplier Device Package: 8-SOIC.
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| FW216A-TL-2W | Hersteller : ON Semiconductor |
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FW216A-TL-2W | Hersteller : onsemi |
Description: MOSFET 2N-CH 35V 4.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Rds On (Max) @ Id, Vgs: 64mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V FET Feature: Logic Level Gate, 4V Drive Supplier Device Package: 8-SOIC |
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