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FW217A-TL-2W ON Semiconductor

on_semiconductor_onsms36776-1-1690472.pdf

Hersteller: ON Semiconductor
MOSFET NCH+NCH 4.5V DRIVE S

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Technische Details FW217A-TL-2W ON Semiconductor

Description: MOSFET 2N-CH 35V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W, Drain to Source Voltage (Vdss): 35V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V, Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, FET Feature: Logic Level Gate, 4.5V Drive, Supplier Device Package: 8-SOIC.

Weitere Produktangebote FW217A-TL-2W

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
FW217A-TL-2W	Hersteller : ONSEMI	Description: ONSEMI - FW217A-TL-2W - MOSFET, DUAL NCH, 35V, 6A, SOIC tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024)	auf Bestellung 9543 Stücke: Lieferzeit 14-21 Tag (e)	Im Einkaufswagen Stück im Wert von UAH
FW217A-TL-2W	Hersteller : onsemi	Description: MOSFET 2N-CH 35V 6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Supplier Device Package: 8-SOIC	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
FW217A-TL-2W	Hersteller : onsemi	Description: MOSFET 2N-CH 35V 6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Supplier Device Package: 8-SOIC	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH