Produkte > ON SEMICONDUCTOR > FW217A-TL-2W

FW217A-TL-2W ON Semiconductor

on_semiconductor_onsms36776-1-1690472.pdf
Hersteller: ON Semiconductor
MOSFET NCH+NCH 4.5V DRIVE S
auf Bestellung 3275 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FW217A-TL-2W ON Semiconductor

Description: MOSFET 2N-CH 35V 6A 8SOIC, Supplier Device Package: 8-SOIC, FET Feature: Logic Level Gate, 4.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 6A, Drain to Source Voltage (Vdss): 35V, Power - Max: 2.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote FW217A-TL-2W

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FW217A-TL-2W FW217A-TL-2W onsemi en8994-d.pdf Description: MOSFET 2N-CH 35V 6A 8SOIC
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 35V
Power - Max: 2.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FW217A-TL-2W FW217A-TL-2W onsemi en8994-d.pdf Description: MOSFET 2N-CH 35V 6A 8SOIC
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 35V
Power - Max: 2.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FW217A-TL-2W en8994-d.pdf
FW217A-TL-2W
Hersteller: onsemi
Description: MOSFET 2N-CH 35V 6A 8SOIC
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 35V
Power - Max: 2.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FW217A-TL-2W en8994-d.pdf
FW217A-TL-2W
Hersteller: onsemi
Description: MOSFET 2N-CH 35V 6A 8SOIC
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 35V
Power - Max: 2.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH