FW4604-TL-2W onsemi
Hersteller: onsemiDescription: MOSFET N/P-CH 30V 6A/4.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Supplier Device Package: 8-SOIC
auf Bestellung 671 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.04 EUR |
| 14+ | 1.28 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FW4604-TL-2W onsemi
Description: MOSFET N/P-CH 30V 6A/4.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V, Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V, FET Feature: Logic Level Gate, 4.5V Drive, Supplier Device Package: 8-SOIC.
Weitere Produktangebote FW4604-TL-2W
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
FW4604-TL-2W | Hersteller : ON Semiconductor |
MOSFET NCH+PCH 4.5V DRIVE |
auf Bestellung 1457 Stücke: Lieferzeit 10-14 Tag (e) |
|
 |
FW4604-TL-2W | Hersteller : ON Semiconductor |
Trans MOSFET N/P-CH 30V 6A/4.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
|
|
|
FW4604-TL-2W | Hersteller : onsemi |
Description: MOSFET N/P-CH 30V 6A/4.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |