FX2000B DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 20A; Ammo Pack; Ifsm: 650A; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.82V
Max. load current: 70A
Max. forward impulse current: 0.65kA
Kind of package: Ammo Pack
Reverse recovery time: 200ns
Leakage current: 5µA
Body dimensions: Ø8x7.5mm
Features of semiconductor devices: fast switching
| Anzahl | Preis |
|---|---|
| 47+ | 1.53 EUR |
| 74+ | 0.97 EUR |
| 109+ | 0.66 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.48 EUR |
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Technische Details FX2000B DIOTEC SEMICONDUCTOR
Description: Diode, Fast, D8x7.5_LowRth, 100V, Packaging: Tape & Box (TB), Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 200 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: P-600, Operating Temperature - Junction: -50°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 940 mV @ 20 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote FX2000B
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FX2000B | Hersteller : Diotec Semiconductor |
Description: DIODE GEN PURP 100V 20A P600 Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 20 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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FX2000B | Hersteller : Diotec Semiconductor AG |
Description: Diode, Fast, D8x7.5_LowRth, 100V Packaging: Tape & Box (TB) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: P-600 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 940 mV @ 20 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |