Produkte > DIOTEC SEMICONDUCTOR > FX2000B
FX2000B

FX2000B DIOTEC SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8F87282041C60C7&compId=fx2000a.pdf?ci_sign=1728f2fd2fb5a54acdb5b935940e1d5bbb8702fd Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Features of semiconductor devices: fast switching
Mounting: THT
Case: Ø8x7,5mm
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 20A
Max. off-state voltage: 100V
Max. load current: 70A
Max. forward impulse current: 0.65kA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1233 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
42+1.72 EUR
67+1.08 EUR
146+0.49 EUR
154+0.46 EUR
12500+0.45 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FX2000B DIOTEC SEMICONDUCTOR

Category: THT universal diodes, Description: Diode: rectifying; THT; 100V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm, Kind of package: Ammo Pack, Features of semiconductor devices: fast switching, Mounting: THT, Case: Ø8x7,5mm, Type of diode: rectifying, Semiconductor structure: single diode, Reverse recovery time: 200ns, Leakage current: 5µA, Max. forward voltage: 0.82V, Load current: 20A, Max. off-state voltage: 100V, Max. load current: 70A, Max. forward impulse current: 0.65kA, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote FX2000B nach Preis ab 0.46 EUR bis 1.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FX2000B FX2000B Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8F87282041C60C7&compId=fx2000a.pdf?ci_sign=1728f2fd2fb5a54acdb5b935940e1d5bbb8702fd Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 20A; Ammo Pack; Ifsm: 650A; Ø8x7,5mm
Kind of package: Ammo Pack
Features of semiconductor devices: fast switching
Mounting: THT
Case: Ø8x7,5mm
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 200ns
Leakage current: 5µA
Max. forward voltage: 0.82V
Load current: 20A
Max. off-state voltage: 100V
Max. load current: 70A
Max. forward impulse current: 0.65kA
auf Bestellung 1233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
67+1.08 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
FX2000B FX2000B Hersteller : Diotec Semiconductor 1.0smbj65.pdf Description: DIODE GEN PURP 100V 20A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FX2000B FX2000B Hersteller : Diotec Semiconductor AG fx2000a.pdf Description: Diode, Fast, D8x7.5_LowRth, 100V
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: P-600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH